IDW40E65D2FKSA1

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Infineon Technologies

THE IDW40E65D2 IS A 650 V SILICON POWER DIODE IN TO-247 PACKAGE

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IDW40E65D2FKSA1

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Infineon Technologies

THE IDW40E65D2 IS A 650 V SILICON POWER DIODE IN TO-247 PACKAGE

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IDW40E65D2FKSA1

Current - Average Rectified (Io)	80 A
Current - Reverse Leakage @ Vr	40 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	PG-TO247-3-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	2.3 V

IDW40E65 Series

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Technology	Package / Case	Reverse Recovery Time (trr)	Mounting Type	Speed	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]
Infineon Technologies IDW40E65D2FKSA1	2.3 V	PG-TO247-3-1	650 V	Standard	TO-247-3	75 ns	Through Hole	200 mA 500 ns	40 µA	80 A	-40 °C	175 ░C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 2.69
		30	$ 2.13
		120	$ 1.83
		510	$ 1.63
		1020	$ 1.39
		2010	$ 1.31
		5010	$ 1.26

Description

General part information

IDW40E65 Series

Rapid 2switching 650 V, 40 A emitter controlledpower silicon diodein a TO-247 package is designed for applications switching between 40 kHz and 100 kHz.

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Technical documentation and resources