ZDX050N50

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Rohm Semiconductor

MOSFET N-CH 500V 5A TO220FM

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Rohm Semiconductor

MOSFET N-CH 500V 5A TO220FM

Technical Specifications

Parameters and characteristics for this part

Specification	ZDX050N50

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	14 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	1.5 Ohm
Supplier Device Package	TO-220FM
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.4 V

MOSFET N-CH 500V 5A TO220FM

Part	Mounting Type	Power Dissipation (Max)	Operating Temperature	Rds On (Max) @ Id, Vgs	Package / Case	Technology	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs (Max)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Drain to Source Voltage (Vdss)	FET Type
Rohm Semiconductor ZDX050N50	Through Hole	40 W	150 °C	1.5 Ohm	TO-220-3 Full Pack	MOSFET (Metal Oxide)	600 pF	5 A	10 V	30 V	4.4 V	14 nC	TO-220FM	500 V	N-Channel

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General part information

N-Channel 500 V 5A (Tc) 40W (Tc) Through Hole TO-220FM

Technical documentation and resources

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