IPD50R3K0CEAUMA1

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Infineon Technologies

TRANS MOSFET N-CH 500V 2.6A 3-PIN(2+TAB) DPAK T/R

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Infineon Technologies

TRANS MOSFET N-CH 500V 2.6A 3-PIN(2+TAB) DPAK T/R

Technical Specifications

Parameters and characteristics for this part

Specification	IPD50R3K0CEAUMA1

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	13 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	4.3 nC
Input Capacitance (Ciss) (Max) @ Vds	84 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	26 W
Rds On (Max) @ Id, Vgs	3 Ohm
Supplier Device Package	PG-TO252-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Package / Case	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Technology	Supplier Device Package	Power Dissipation (Max)	Vgs (Max)	FET Type	Vgs(th) (Max) @ Id
Infineon Technologies IPD50R3K0CEAUMA1	DPAK (2 Leads + Tab) SC-63 TO-252-3	500 V	13 V	Surface Mount	3 Ohm	84 pF	1.7 A	4.3 nC	-55 °C	150 °C	MOSFET (Metal Oxide)	PG-TO252-3	26 W	20 V	N-Channel	3.5 V

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General part information

N-Channel 500 V 1.7A (Tc) 26W (Tc) Surface Mount PG-TO252-3

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