Technical Specifications
Parameters and characteristics for this part
| Specification | STS5N15F4 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 5 A |
| Drain to Source Voltage (Vdss) | 150 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 48 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2710 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-SOIC |
| Package / Case [x] | 0.154 in |
| Package / Case [y] | 3.9 mm |
| Power Dissipation (Max) | 2.5 W |
| Rds On (Max) @ Id, Vgs | 63 mOhm |
| Supplier Device Package | 8-SOIC |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STS5N15F4 Series
This STripFET DeepGATE Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.
Documents
Technical documentation and resources
AN4337
Application NotesAN3267
Application NotesTN1225
Technical Notes & ArticlesFlyers (5 of 6)
Flyers (5 of 6)
Flyers (5 of 6)
TN1224
Technical Notes & ArticlesAN1703
Application NotesFlyers (5 of 6)
DS6419
Product SpecificationsUM1575
User ManualsFlyers (5 of 6)
AN4390
Application NotesFlyers (5 of 6)
