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STS5N15F4 - 8-SOIC

STS5N15F4

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STMicroelectronics

N-CHANNEL 150 V, 0.057 OHM, 5 A, SO-8 STRIPFET(TM) DEEPGATE(TM) POWER MOSFET

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STS5N15F4 - 8-SOIC

STS5N15F4

Active
STMicroelectronics

N-CHANNEL 150 V, 0.057 OHM, 5 A, SO-8 STRIPFET(TM) DEEPGATE(TM) POWER MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTS5N15F4
Current - Continuous Drain (Id) @ 25°C5 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]48 nC
Input Capacitance (Ciss) (Max) @ Vds2710 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power Dissipation (Max)2.5 W
Rds On (Max) @ Id, Vgs63 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.70
10$ 1.41
100$ 1.12
500$ 0.95
1000$ 0.81
Digi-Reel® 1$ 1.70
10$ 1.41
100$ 1.12
500$ 0.95
1000$ 0.81
Tape & Reel (TR) 2500$ 0.74
5000$ 0.71
NewarkEach 1$ 2.30
10$ 1.84
100$ 1.33
500$ 1.10
1000$ 1.07

Description

General part information

STS5N15F4 Series

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.