IPU95R750P7AKMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; IPAK TO-251 PACKAGE; 750 MOHM; PRICE/PERFORMANCE

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IPU95R750P7AKMA1

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Infineon Technologies

COOLMOS™ P7 N-CHANNEL SUPERJUNCTION MOSFET 950 V ; IPAK TO-251 PACKAGE; 750 MOHM; PRICE/PERFORMANCE

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Technical Specifications

Parameters and characteristics for this part

Specification	IPU95R750P7AKMA1

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	950 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	23 nC
Input Capacitance (Ciss) (Max) @ Vds	712 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max) [Max]	73 W
Rds On (Max) @ Id, Vgs	750 mOhm
Supplier Device Package	PG-TO251-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

IPU95R750 Series

Part	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max) [Max]	Package / Case	Technology	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]
Infineon Technologies IPU95R750P7AKMA1	9 A	23 nC	950 V	Through Hole	PG-TO251-3	712 pF	750 mOhm	20 V	N-Channel	10 V	73 W	IPAK TO-251-3 Short Leads TO-251AA	MOSFET (Metal Oxide)	3.5 V	-55 °C	150 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1500	$ 0.78
Newark	Each	1	$ 1.25
		10	$ 1.18
		100	$ 1.15
		500	$ 1.11
		1000	$ 1.10

Description

General part information

IPU95R750 Series

Designed to meet the growing consumer needs in the high voltage MOSFETs arena, the latest950 V CoolMOS™ P7technology focuses on the low-power SMPS market. Offering 50 V more blocking voltage than its predecessor 900V CoolMOS™ C3, the 950 V CoolMOS™ P7 series delivers outstanding performance in terms of efficiency, thermal behavior and ease-of-use. As the all other P7 family members, the 950 V CoolMOS™ P7 series comes with an integrated Zener diode ESD protection. The integrated diode considerably improves ESD robustness, thus reducing ESD-related yield loss and reaching exceptional ease-of-use levels. CoolMOS™ P7 is developed with best-in-class VGS(th)of 3 V and a narrow tolerance of only ± 0.5 V, which makes it easy to drive and design-in.

Documents

Technical documentation and resources