R6504KNXC7G
ActiveRohm Semiconductor
650V 4A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
R6504KNXC7G
ActiveRohm Semiconductor
650V 4A TO-220FM, HIGH-SPEED SWITCHING POWER MOSFET
Description
General part information
R6504KNX Series
R6504KNX is a power MOSFET with low on-resistance and fast switching, suitable for the switching application.
Technical Specifications
Parameters and characteristics for this part
| Specification | R6504KNXC7G |
|---|---|
| Current - Continuous Drain (Id) (Ta) | 4 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 10 nC |
| Input Capacitance (Ciss) (Max) | 270 pF |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 Full Pack |
| Package Name | TO-220FM |
| Power Dissipation (Max) | 40 W |
| Rds On (Max) | 1.05 Ohm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
What is a Thermal Model? (Transistor)
Part Explanation
How to Use the Thermal Resistance and Thermal Characteristics Parameters
About Flammability of Materials
R6504KNX Data Sheet
R6504KNX ESD Data
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Compliance of the RoHS directive
Method for Monitoring Switching Waveform
About Export Regulations
Notes for Calculating Power Consumption:Static Operation
Temperature derating method for Safe Operating Area (SOA)
Precautions When Measuring the Rear of the Package with a Thermocouple
θ<sub>JC</sub> and Ψ<sub>JT</sub>
MOSFET Gate Resistor Setting for Motor Driving
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Impedance Characteristics of Bypass Capacitor
Two-Resistor Model for Thermal Simulation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Notes for Temperature Measurement Using Forward Voltage of PN Junction
List of Transistor Package Thermal Resistance
Types and Features of Transistors
Moisture Sensitivity Level - Transistors
Judgment Criteria of Thermal Evaluation
Basics of Thermal Resistance and Heat Dissipation
How to Create Symbols for PSpice Models
How to Use LTspice® Models: Tips for Improving Convergence
ROHM Solution Simulator Power Device User's Guide for Inverter
How to Use LTspice® Models
Importance of Probe Calibration When Measuring Power: Deskew
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
What Is Thermal Design
Notes for Temperature Measurement Using Thermocouples
Anti-Whisker formation - Transistors
Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials
Calculation of Power Dissipation in Switching Circuit
Measurement Method and Usage of Thermal Resistance RthJC
PCB Layout Thermal Design Guide
Package Dimensions
Inner Structure
Explanation for Marking
Reliability Test Result
MOSFET Gate Drive Current Setting for Motor Driving