STW20NB50

Obsolete

STMicroelectronics

MOSFET N-CH 500V 20A TO247-3

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Obsolete

STMicroelectronics

MOSFET N-CH 500V 20A TO247-3

Technical Specifications

Parameters and characteristics for this part

Specification	STW20NB50

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	4700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs [Max]	250 mOhm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Power Dissipation (Max) [Max]	Vgs (Max)	Rds On (Max) @ Id, Vgs [Max]	Operating Temperature	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Technology	FET Type	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
STMicroelectronics STW20NB50	110 nC	250 W	30 V	250 mOhm	150 °C	10 V	TO-247-3	500 V	20 A	TO-247-3	MOSFET (Metal Oxide)	N-Channel	5 V	4700 pF	Through Hole
STMicroelectronics STW20NK70Z	185 nC		30 V			10 V	TO-247-3	700 V	20 A	TO-247-3	MOSFET (Metal Oxide)	N-Channel	4.5 V	6000 pF	Through Hole	-55 °C	150 °C	350 W	285 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 20A (Tc) 250W (Tc) Through Hole TO-247-3

Technical documentation and resources