SS1H20LS

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 1A SOD123HE

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 1A SOD123HE

Technical Specifications

Parameters and characteristics for this part

Specification	SS1H20LS

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123H
Speed	200 mA, 500 ns
Supplier Device Package	SOD-123HE
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	200 V
Voltage - Forward (Vf) (Max) @ If	850 mV

Part	Technology	Speed	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Mounting Type
Taiwan Semiconductor Corporation SS1H20LS	Schottky	200 mA 500 ns	SOD-123HE	200 V	150 °C	-55 °C	1 A	1 µA	SOD-123H	850 mV	Surface Mount
Taiwan Semiconductor Corporation SS1H20LW	Schottky	200 mA 500 ns	SOD-123W	200 V	175 ░C	-55 C	1 A	500 nA	SOD-123W	850 mV	Surface Mount

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General part information

Diode 200 V 1A Surface Mount SOD-123HE

Technical documentation and resources