2SC3665-Y,T2NSF(J

Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.8A MSTM

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Obsolete

Toshiba Semiconductor and Storage

TRANS NPN 120V 0.8A MSTM

Technical Specifications

Parameters and characteristics for this part

Specification	2SC3665-Y,T2NSF(J

Current - Collector (Ic) (Max) [Max]	800 mA
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	120 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-71
Power - Max [Max]	1 W
Supplier Device Package	MSTM
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	120 V

Part	Package / Case	Frequency - Transition	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic	Voltage - Collector Emitter Breakdown (Max) [Max]	Power - Max [Max]	Operating Temperature	Current - Collector Cutoff (Max) [Max]	Mounting Type
Toshiba Semiconductor and Storage 2SC3665-Y,T2NSF(J	SC-71	120 MHz	MSTM	800 mA	NPN	80	1 V	120 V	1 W	150 °C	100 nA	Through Hole
Toshiba Semiconductor and Storage 2SC3665-Y(T2NSW,FM	SC-71	120 MHz	MSTM	800 mA	NPN	80	1 V	120 V	1 W	150 °C	100 nA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 1 W Through Hole MSTM

Technical documentation and resources