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Description

General part information

2SC3665 Series

Bipolar (BJT) Transistor NPN 120 V 800 mA 120MHz 1 W Through Hole MSTM

Technical Specifications

Parameters and characteristics for this part

Specification2SC3665-Y,T2NSF(J
Current - Collector (Ic) (Max)800 mA
Current - Collector Cutoff (Max)100 nA
DC Current Gain (hFE) (Min)80
Frequency - Transition120 MHz
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseSC-71
Package NameMSTM
Power - Max1 VA
Transistor TypeNPN
Vce Saturation (Max)1 V
Voltage - Collector Emitter Breakdown (Max)120 V

Pricing

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