FKV550T

Obsolete

Sanken Electric USA Inc.

MOSFET N-CH 50V 50A TO220F

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Obsolete

Sanken Electric USA Inc.

MOSFET N-CH 50V 50A TO220F

Technical Specifications

Parameters and characteristics for this part

Specification	FKV550T

Current - Continuous Drain (Id) @ 25°C	50 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	2700 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	13 mOhm
Supplier Device Package	TO-220F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

Part	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Package / Case	Mounting Type	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Technology	Operating Temperature	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds
Sanken Electric USA Inc. FKV550T	35 W	50 A	TO-220-3 Full Pack	Through Hole	N-Channel	10 V	50 V	MOSFET (Metal Oxide)	150 °C	2.5 V	20 V	TO-220F	13 mOhm	2700 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 50A (Ta) 35W (Tc) Through Hole TO-220F

Technical documentation and resources