IXFN120N20

IXYS

MOSFET N-CH 200V 120A SOT-227B

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IXYS

MOSFET N-CH 200V 120A SOT-227B

Technical Specifications

Parameters and characteristics for this part

Specification	IXFN120N20

Current - Continuous Drain (Id) @ 25°C	120 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	360 nC
Input Capacitance (Ciss) (Max) @ Vds	9100 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-227-4, miniBLOC
Power Dissipation (Max)	600 W
Rds On (Max) @ Id, Vgs	17 mOhm
Supplier Device Package	SOT-227B
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	FET Type	Supplier Device Package	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology
IXYS IXFN120N20	-55 °C	150 °C	4 V	Chassis Mount	600 W	120 A	SOT-227-4 miniBLOC	10 V	200 V	9100 pF	20 V	N-Channel	SOT-227B	17 mOhm	360 nC	MOSFET (Metal Oxide)
IXYS IXFN120N25				Chassis Mount		120 A	SOT-227-4 miniBLOC		250 V			N-Channel	SOT-227B			MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	300	$ 28.77

General part information

N-Channel 200 V 120A (Tc) 600W (Tc) Chassis Mount SOT-227B

Technical documentation and resources

No documents available