TC7SZ00F,LJ(CT

Active

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

Search across all available documentation for this part.

Active

Toshiba Semiconductor and Storage

IC GATE NAND 1CH 2-INP SMV

Technical Specifications

Parameters and characteristics for this part

Specification	TC7SZ00F,LJ(CT

Current - Output High, Low [x]	32 mA
Current - Output High, Low [y]	32 mA
Logic Type	NAND Gate
Max Propagation Delay @ V, Max CL	4.3 ns
Mounting Type	Surface Mount
Number of Circuits	1
Number of Inputs	2
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	SC-74A, SOT-753
Supplier Device Package	SMV
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	1.8 V

Part	Mounting Type	Package / Case	Number of Inputs	Current - Output High, Low [y]	Current - Output High, Low [x]	Operating Temperature [Max]	Operating Temperature [Min]	Logic Type	Number of Circuits	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Max Propagation Delay @ V, Max CL
Toshiba Semiconductor and Storage TC7SZ00FE,LJ(CT	Surface Mount	SOT-553	2	32 mA	32 mA	85 °C	-40 °C	NAND Gate	1	ESV	5.5 V	1.65 V
Toshiba Semiconductor and Storage TC7SZ00F,LJ(CT	Surface Mount	SC-74A SOT-753	2	32 mA	32 mA	85 °C	-40 °C	NAND Gate	1	SMV	5.5 V	1.8 V	4.3 ns
Toshiba Semiconductor and Storage TC7SZ00F(TE85L,JF)	Surface Mount	SC-74A SOT-753	2	32 mA	32 mA	85 °C	-40 °C	NAND Gate	1	SMV	5.5 V	1.8 V	4.3 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NAND Gate IC 1 Channel SMV

Technical documentation and resources