STL11N65M2

Obsolete

STMicroelectronics

MOSFET N-CH 650V POWERFLAT 5X5 H

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Obsolete

STMicroelectronics

MOSFET N-CH 650V POWERFLAT 5X5 H

Technical Specifications

Parameters and characteristics for this part

Specification	STL11N65M2

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.4 nC
Input Capacitance (Ciss) (Max) @ Vds	410 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power Dissipation (Max) [Max]	85 W
Rds On (Max) @ Id, Vgs	670 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id	Vgs (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package [x]	Supplier Device Package	Supplier Device Package [y]	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs
STMicroelectronics STL11N4LLF5	12.9 nC	40 V	N-Channel	Surface Mount	1570 pF	MOSFET (Metal Oxide)	4.5 V 10 V	8-PowerVDFN	2.5 V	20 V	2.9 W 50 W	11 A	-55 °C	150 °C	3.3	PowerFlat™ (3.3x3.3)	3.3	9.7 mOhm
STMicroelectronics STL11N65M2		650 V	N-Channel	Surface Mount	410 pF	MOSFET (Metal Oxide)	10 V		4 V	25 V		7 A	-55 °C	150 °C				670 mOhm	85 W	12.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 650 V 7A (Tc) 85W (Tc) Surface Mount

Technical documentation and resources

No documents available