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2N2605UB

2N2605UB

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Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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2N2605UB

2N2605UB

Active
Microchip Technology

SMALL-SIGNAL BJT UB ROHS COMPLIANT: YES

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Description

General part information

2N2605 Series

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device, as specified in MIL-PRF-19500/354. RHA level designators "M", "D", "P", "L", "R", "F’, "G" and "H" are appended to the device prefix to identify devices, which have passed RHA requirements. The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354.

Technical Specifications

Parameters and characteristics for this part

Specification2N2605UB
Current - Collector (Ic) (Max)0.03 mA
Current - Collector Cutoff (Max)10 nA
DC Current Gain (hFE) (Min)150
Mounting TypeSurface Mount
Operating Temperature (Max)200 °C
Operating Temperature (Min)-65 °C
Package / Case4-SMD, No Lead
Package NameUB
Power - Max400 mW
Transistor TypePNP
Vce Saturation (Max)300 mV
Voltage - Collector Emitter Breakdown (Max)60 V

Pricing

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CAD

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