IRF1404ZPBF

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 3.7 MOHM;

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Infineon Technologies

IR MOSFET™ N-CHANNEL POWER MOSFET ; TO-220 PACKAGE; 3.7 MOHM;

Technical Specifications

Parameters and characteristics for this part

Specification	IRF1404ZPBF

Current - Continuous Drain (Id) @ 25°C	180 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	150 nC
Input Capacitance (Ciss) (Max) @ Vds	4340 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	200 W
Rds On (Max) @ Id, Vgs	3.7 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Package / Case	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs	Technology	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]
Infineon Technologies IRF1404ZSTRLPBF	N-Channel	180 A	40 V	200 W	10 V	3.7 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	-55 °C	175 ░C	4340 pF	4 V	20 V	150 nC	MOSFET (Metal Oxide)
Infineon Technologies 64-2105PBF	N-Channel	75 A	40 V	200 W	10 V	3.7 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	-55 °C	175 ░C	4340 pF	4 V	20 V	150 nC	MOSFET (Metal Oxide)	TO-262
Infineon Technologies IRF1404LPBF	N-Channel	162 A	40 V	3.8 W 200 W	10 V	4 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	-55 °C	175 ░C		4 V	20 V	200 nC	MOSFET (Metal Oxide)	TO-262	7360 pF
Infineon Technologies IRF1404ZPBF	N-Channel	180 A	40 V	200 W	10 V	3.7 mOhm	TO-220-3	Through Hole	-55 °C	175 ░C	4340 pF	4 V	20 V	150 nC	MOSFET (Metal Oxide)	TO-220AB
Infineon Technologies IRF1404STRRPBF	N-Channel	162 A	40 V	3.8 W 200 W	10 V	4 mOhm	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	Surface Mount	-55 °C	175 ░C		4 V	20 V	200 nC	MOSFET (Metal Oxide)	D2PAK	7360 pF
Infineon Technologies 64-2042	N-Channel	75 A	40 V		10 V	3.7 mOhm	I2PAK TO-262-3 Long Leads TO-262AA	Through Hole	-55 °C	175 ░C	4340 pF	4 V	20 V	150 nC	MOSFET (Metal Oxide)	TO-262		220 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 40 V 180A (Tc) 200W (Tc) Through Hole TO-220AB

Technical documentation and resources