Technical Specifications
Parameters and characteristics for this part
| Specification | STGWT80H65DFB |
|---|---|
| Current - Collector (Ic) (Max) | 120 A |
| Current - Collector Pulsed (Icm) | 240 A |
| Gate Charge | 414 nC |
| IGBT Type | Trench Field Stop |
| Mounting Type | Through Hole |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Power - Max [Max] | 469 W |
| Reverse Recovery Time (trr) | 85 ns |
| Supplier Device Package | TO-3P |
| Switching Energy | 2.1 mJ, 1.5 mJ |
| Td (on/off) @ 25°C | 280 ns, 84 ns |
| Test Condition | 10 Ohm, 400 V, 15 V, 80 A |
| Vce(on) (Max) @ Vge, Ic | 2 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STGWT80H65DFB Series
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Documents
Technical documentation and resources