IPI12CN10N G

Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A TO262-3

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Obsolete

Infineon Technologies

MOSFET N-CH 100V 67A TO262-3

Technical Specifications

Parameters and characteristics for this part

Specification	IPI12CN10N G

Current - Continuous Drain (Id) @ 25°C	67 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	4320 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	125 W
Rds On (Max) @ Id, Vgs	12.9 mOhm
Supplier Device Package	PG-TO262-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Power Dissipation (Max)
Infineon Technologies IPI12CN10N G	N-Channel	PG-TO262-3	10 V	67 A	Through Hole	12.9 mOhm	-55 °C	175 ░C	20 V	I2PAK TO-262-3 Long Leads TO-262AA	100 V	4 V	65 nC	4320 pF	MOSFET (Metal Oxide)	125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 67A (Tc) 125W (Tc) Through Hole PG-TO262-3

Technical documentation and resources

No documents available