IXXK200N65B4

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IXYS

TRANSISTOR: IGBT; GENX4™; 650V; 200A; 1.63KW; TO264

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Active

IXYS

TRANSISTOR: IGBT; GENX4™; 650V; 200A; 1.63KW; TO264

Technical Specifications

Parameters and characteristics for this part

Specification	IXXK200N65B4

Current - Collector (Ic) (Max) [Max]	370 A
Current - Collector Pulsed (Icm)	1000 A
Gate Charge	553 nC
IGBT Type	PT
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-264AA, TO-264-3
Power - Max [Max]	1150 W
Supplier Device Package	TO-264 (IXXK)
Switching Energy	2.2 mJ, 4.4 mJ
Td (on/off) @ 25°C	245 ns
Td (on/off) @ 25°C	62 ns
Test Condition	15 V, 400 V, 1 Ohm, 100 A
Vce(on) (Max) @ Vge, Ic	1.7 V
Voltage - Collector Emitter Breakdown (Max)	650 V

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C	Supplier Device Package	Switching Energy	Current - Collector (Ic) (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	IGBT Type	Test Condition	Vce(on) (Max) @ Vge, Ic	Gate Charge	Current - Collector Pulsed (Icm)	Mounting Type	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Td (on/off) @ 25°C
IXYS IXXK200N60B3	600 V	48 ns 160 ns	TO-264 (IXXK)	2.85 mJ 2.9 mJ	380 A	-55 °C	175 ░C	TO-264-3 TO-264AA	PT	1 Ohm 15 V 100 A 360 V	1.7 V	315 nC	900 A	Through Hole	1630 W
IXYS IXXK200N65B4		62 ns	TO-264 (IXXK)	2.2 mJ 4.4 mJ	370 A	-55 °C	175 ░C	TO-264-3 TO-264AA	PT	1 Ohm 15 V 100 A 400 V	1.7 V	553 nC	1000 A	Through Hole	1150 W	650 V	245 ns

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

IGBT PT 650 V 370 A 1150 W Through Hole TO-264 (IXXK)

Technical documentation and resources

No documents available