AUIRFS8407-7P

Obsolete

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

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Obsolete

Infineon Technologies

MOSFET N-CH 40V 240A D2PAK-7

Technical Specifications

Parameters and characteristics for this part

Specification	AUIRFS8407-7P

Current - Continuous Drain (Id) @ 25°C	240 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	225 nC
Input Capacitance (Ciss) (Max) @ Vds	7437 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-263-7, D2PAK
Power Dissipation (Max) [Max]	231 W
Rds On (Max) @ Id, Vgs	1.3 mOhm
Supplier Device Package	PG-TO263-7
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.9 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Supplier Device Package
Infineon Technologies AUIRFS8407TRL	10 V	40 V	N-Channel	1.8 mOhm	230 W	Surface Mount	-55 °C	175 ░C	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	7330 pF	20 V	MOSFET (Metal Oxide)	225 nC	195 A	4 V
Infineon Technologies AUIRFS8407-7P	10 V	40 V	N-Channel	1.3 mOhm	231 W	Surface Mount	-55 °C	175 ░C	D2PAK TO-263-7	7437 pF	20 V	MOSFET (Metal Oxide)	225 nC	240 A	3.9 V	PG-TO263-7

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 10.32

General part information

N-Channel 40 V 240A (Tc) 231W (Tc) Surface Mount PG-TO263-7

Technical documentation and resources