BSR92PL6327HTSA1

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Infineon Technologies

MOSFET P-CH 250V 140MA SC59

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Infineon Technologies

MOSFET P-CH 250V 140MA SC59

Technical Specifications

Parameters and characteristics for this part

Specification	BSR92PL6327HTSA1

Current - Continuous Drain (Id) @ 25°C	140 mA
Drain to Source Voltage (Vdss)	250 V
Drive Voltage (Max Rds On, Min Rds On)	2.8 V, 10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.8 nC
Input Capacitance (Ciss) (Max) @ Vds	109 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max) [Max]	500 mW
Rds On (Max) @ Id, Vgs	11 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	1 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Technology	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Vgs (Max)	Package / Case
Infineon Technologies BSR92PL6327HTSA1	Surface Mount	-55 °C	150 °C	P-Channel	250 V	2.8 V 10 V	140 mA	500 mW	4.8 nC	MOSFET (Metal Oxide)	11 Ohm	109 pF	1 V	20 V	SC-59 SOT-23-3 TO-236-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 250 V 140mA (Ta) 500mW (Ta) Surface Mount PG-SC59-3

Technical documentation and resources