DMN3022LDG-7

Active

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Search across all available documentation for this part.

Active

Diodes Inc

30V SYNCHRONOUS N-CHANNEL ENHANCEMENT MODE MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	DMN3022LDG-7

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	15 A, 7.6 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	8 nC
Gate Charge (Qg) (Max) @ Vgs	3.7 nC
Input Capacitance (Ciss) (Max) @ Vds	481 pF, 996 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerLDFN
Power - Max [Max]	1.96 W
Rds On (Max) @ Id, Vgs	8 mOhm, 22 mOhm
Supplier Device Package	PowerDI3333-8 (Type D)
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.1 V, 1.2 V

30V SYNCHRONOUS N-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Power - Max [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Mounting Type	Configuration
Diodes Inc DMN3022LDG-7	PowerDI3333-8 (Type D)	30 V	7.6 A 15 A	1.96 W	-55 °C	150 °C	8-PowerLDFN	481 pF 996 pF	8 nC	3.7 nC	MOSFET (Metal Oxide)	1.2 V 2.1 V	8 mOhm 22 mOhm	Surface Mount	2 N-Channel (Dual)
Diodes Inc DMN3022LFG-7	PowerDI3333-8 (Type D)	30 V	7.6 A 15 A	1.96 W	-55 °C	150 °C	8-PowerLDFN	481 pF 996 pF	8 nC	3.7 nC	MOSFET (Metal Oxide)	1.2 V 2.1 V	8 mOhm 22 mOhm	Surface Mount	2 N-Channel (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

30V SYNCHRONOUS N-Channel Enhancement Mode MOSFET

Technical documentation and resources