IRF6722MTRPBF

Unknown

Infineon Technologies

MOSFET N-CH 30V 13A/56A DIRECTFT

Search across all available documentation for this part.

Unknown

Infineon Technologies

MOSFET N-CH 30V 13A/56A DIRECTFT

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6722MTRPBF

Current - Continuous Drain (Id) @ 25°C	13 A, 56 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	1300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-40 °C
Package / Case	DirectFET™ Isometric MP
Power Dissipation (Max)	42 W, 2.3 W
Rds On (Max) @ Id, Vgs [Max]	7.7 mOhm
Supplier Device Package	DIRECTFET™ MP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.4 V

Part	Vgs (Max)	Operating Temperature [Max]	Operating Temperature [Min]	Power Dissipation (Max)	FET Type	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Technology	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs [Max]
Infineon Technologies IRF6722MTRPBF	20 V	150 °C	-40 °C	2.3 W 42 W	N-Channel	DirectFET™ Isometric MP	1300 pF	30 V	17 nC	Surface Mount	MOSFET (Metal Oxide)	2.4 V	4.5 V 10 V	13 A 56 A	DIRECTFET™ MP	7.7 mOhm
Infineon Technologies IRF6722MTRPBF	20 V	150 °C	-40 °C	2.3 W 42 W	N-Channel	DirectFET™ Isometric MP	1300 pF	30 V	17 nC	Surface Mount	MOSFET (Metal Oxide)	2.4 V	4.5 V 10 V	13 A 56 A	DIRECTFET™ MP	7.7 mOhm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 13A (Ta), 56A (Tc) 2.3W (Ta), 42W (Tc) Surface Mount DIRECTFET™ MP

Technical documentation and resources