STS11N3LLH5

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STMicroelectronics

MOSFET N-CH 30V 11A 8SO

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STMicroelectronics

MOSFET N-CH 30V 11A 8SO

Technical Specifications

Parameters and characteristics for this part

Specification	STS11N3LLH5

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	5 nC
Input Capacitance (Ciss) (Max) @ Vds	724 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.7 W
Rds On (Max) @ Id, Vgs	14 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-20 V
Vgs(th) (Max) @ Id	1 V

MOSFET N-CH 30V 11A 8SO

Part	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Power Dissipation (Max)	Vgs (Max) [Min]	Vgs (Max) [Max]	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Supplier Device Package	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C
STMicroelectronics STS11N3LLH5	-55 °C	150 °C	N-Channel	30 V	8-SOIC	3.9 mm	0.154 in	2.7 W	-20 V	22 V	14 mOhm	5 nC	Surface Mount	8-SOIC	MOSFET (Metal Oxide)	724 pF	1 V	4.5 V, 10 V	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 11A (Tc) 2.7W (Tc) Surface Mount 8-SOIC

Technical documentation and resources

No documents available