IRFD310

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Harris Corporation

0.4A 400V 3.600 OHM N-CHANNEL

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Harris Corporation

0.4A 400V 3.600 OHM N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD310

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	400 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	170 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	3.6 Ohm
Supplier Device Package	4-DIP, Hexdip, HVMDIP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

0.4A 400V 3.600 OHM N-CHANNEL

Part	Technology	FET Type	Vgs(th) (Max) @ Id	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Vgs (Max)	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]
Harris Corporation IRFD310	MOSFET (Metal Oxide)	N-Channel	4 V	Through Hole	10 V	4-DIP, Hexdip, HVMDIP	20 V	4-DIP (0.300", 7.62mm)	400 V	3.6 Ohm	170 pF	1 W	350 mA	17 nC	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	243	$ 1.24

General part information

N-Channel 400 V 350mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP

Technical documentation and resources

No documents available