BSZ0501NSIATMA1
ActiveInfineon Technologies
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
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BSZ0501NSIATMA1
ActiveInfineon Technologies
OPTIMOS™ 5 N-CHANNEL POWER MOSFET 30 V ; PQFN 3.3 X 3.3 PACKAGE; 2 MOHM; MONOLITHICALLY INTEGRATED SCHOTTKY-LIKE DIODE
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BSZ0501NSIATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 40 A, 25 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 2000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerTDFN |
| Power Dissipation (Max) | 50 W, 2.1 W |
| Rds On (Max) @ Id, Vgs | 2 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.57 | |
| 10 | $ 1.10 | |||
| 100 | $ 0.81 | |||
| 500 | $ 0.64 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.62 | |||
| Digi-Reel® | 1 | $ 1.57 | ||
| 10 | $ 1.10 | |||
| 100 | $ 0.81 | |||
| 500 | $ 0.64 | |||
| 1000 | $ 0.60 | |||
| 2000 | $ 0.62 | |||
| Tape & Reel (TR) | 5000 | $ 0.51 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 1.76 | |
| 10 | $ 1.14 | |||
| 25 | $ 1.04 | |||
| 50 | $ 0.93 | |||
| 100 | $ 0.82 | |||
| 250 | $ 0.74 | |||
| 500 | $ 0.66 | |||
| 1000 | $ 0.60 | |||
Description
General part information
BSZ0501 Series
With the OptiMOS™ 5 25V and 30V product family, Infineon offers benchmark solutions by enabling highest power density and energy efficiency, both in standby and full operation.
Documents
Technical documentation and resources