ZTD09N50DE6QTA

Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 50V V(BR)CEO, 2-ELEMENT, NPN, SILICON,

Search across all available documentation for this part.

Active

Diodes Inc

SMALL SIGNAL BIPOLAR TRANSISTOR, 1A I(C), 50V V(BR)CEO, 2-ELEMENT, NPN, SILICON,

Technical Specifications

Parameters and characteristics for this part

Specification	ZTD09N50DE6QTA

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	215 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	1.1 W
Supplier Device Package	SOT-26
Transistor Type	2 NPN (Dual)
Vce Saturation (Max) @ Ib, Ic	270 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Dual NPN, 50V, 1A, SOT26

Part	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Frequency - Transition	Power - Max [Max]
Diodes Inc ZTD09N50DE6QTA	10 nA	270 mV	1 A	200	-55 °C	150 °C	Surface Mount	SOT-23-6	SOT-26	50 V	2 NPN (Dual)	215 MHz	1.1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

TN1.pdf

Technical documentation and resources