IPT019N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.9 MOHM;
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IPT019N08N5ATMA1
ActiveOPTIMOS™ 5 N-CHANNEL POWER MOSFET 80 V ; TOLL HSOF-8 PACKAGE; 1.9 MOHM;
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPT019N08N5ATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 32 A, 247 A |
| Drain to Source Voltage (Vdss) | 80 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 127 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 9200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 8-PowerSFN |
| Power Dissipation (Max) [Max] | 231 W |
| Rds On (Max) @ Id, Vgs | 1.9 mOhm |
| Supplier Device Package | PG-HSOF-8-1 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 3.8 V |
Pricing
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Description
General part information
IPT019 Series
Infineon’sOptiMOS™ 5 80Vn-channel power MOSFET IPT019N08N5 in TO-Leadless package is ideally suited for high switching frequencies. This package is especially designed for high current applications such asforklift,light electric vehicles (LEV), POL (point-of-load) andtelecom. With a 60% space reduction compared to D2PAK 7pin package, TO-Leadless (TOLL) is the perfect solution where highest efficiency, outstanding EMI behavior as well as best thermal behavior and space reduction are required.
Documents
Technical documentation and resources