Technical Specifications
Parameters and characteristics for this part
| Specification | SH32N65DM6AG |
|---|---|
| Configuration | 2 N-Channel (Half Bridge) |
| Current - Continuous Drain (Id) @ 25°C | 32 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 47 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 2211 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 9-PowerSMD |
| Power - Max [Max] | 208 W |
| Rds On (Max) @ Id, Vgs [Max] | 97 mOhm |
| Supplier Device Package | 9-ACEPACK SMIT |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4.75 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
SH32N65DM6AG Series
This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.
Documents
Technical documentation and resources
