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STMICROELECTRONICS SH32N65DM6AG

SH32N65DM6AG

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STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 89 MOHM TYP., 32 A MDMESH DM6 HALF-BRIDGE TOPOLOGY POWER MOSFET IN AN ACEPACK SMIT PACKAGE

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STMICROELECTRONICS SH32N65DM6AG

SH32N65DM6AG

Active
STMicroelectronics

AUTOMOTIVE-GRADE N-CHANNEL 650 V, 89 MOHM TYP., 32 A MDMESH DM6 HALF-BRIDGE TOPOLOGY POWER MOSFET IN AN ACEPACK SMIT PACKAGE

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Description

General part information

SH32N65 Series

This device combines two MOSFETs in a half-bridge topology. The ACEPACK SMIT is a very compact and rugged power module in a surface mount package for easy assembly. Thanks to the DBC substrate, the ACEPACK SMIT package offers low thermal resistance coupled with an isolated top-side thermal pad. The high design flexibility of the package enables several configurations, including phase legs, boost, and single switch through different combinations of the internal power switches.

Technical Specifications

Parameters and characteristics for this part

SpecificationSH32N65DM6AG
Channel Count2
ConfigurationN-Channel
Configuration - FeaturesHalf Bridge
Current - Continuous Drain (Id) (Tc)32 A
Drain to Source Voltage (Vdss)650 V
Gate Charge (Max)47 nC
Input Capacitance (Ciss) (Max)2211 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / Case9-PowerSMD
Package Name9-ACEPACK SMIT
Power - Max (Tc)208 W
Rds On (Max)97 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max)4.75 V

Pricing

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CAD

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