D55342E07B63A4RWI

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Vishay General Semiconductor - Diodes Division

D55342E 25PPM 1206 63.4 0.1% R W

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Vishay General Semiconductor - Diodes Division

D55342E 25PPM 1206 63.4 0.1% R W

Technical Specifications

Parameters and characteristics for this part

Specification	D55342E07B63A4RWI

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Part	Number of Terminations	Resistance	Failure Rate	Package / Case	Tolerance	Composition	Size / Dimension [y]	Size / Dimension [y]	Size / Dimension [x]	Size / Dimension [x]	Temperature Coefficient	Height - Seated (Max) [Max] [z]	Height - Seated (Max) [Max] [z]	Supplier Device Package	Features	Operating Temperature [Min]	Operating Temperature [Max]	Power (Watts)	Power (Watts)
Vishay General Semiconductor - Diodes Division D55342K07B100DPBSV	2	100 Ohms	P	1206 (3216 Metric)	1 %	Thin Film	0.063 in	1.6 mm	0.126 "	3.2 mm	100 ppm/°C	0.84 mm	0.033 "	1206	Military Non-Inductive	-55 °C	150 °C	0.25 W	250 mW
Vishay General Semiconductor - Diodes Division D55342K07B1C00RTI
Vishay General Semiconductor - Diodes Division D55342E07B4E22RT5
Vishay General Semiconductor - Diodes Division D55342E07B2E37RT5
Vishay General Semiconductor - Diodes Division D55342K07B1B10SWS
Vishay General Semiconductor - Diodes Division D55342E07B4B12RTI
Vishay General Semiconductor - Diodes Division D55342H07B100MRWS
Vishay General Semiconductor - Diodes Division D55342E07B15E2RWI
Vishay General Semiconductor - Diodes Division D55342H07B475APWS
Vishay General Semiconductor - Diodes Division D55342H07B33D2RT5	2	33.2 Ohms	R (0.01%)	1206 (3216 Metric)	1 %	Thin Film	0.063 in	1.6 mm	0.126 "	3.2 mm	50 ppm/°C	0.84 mm	0.033 "	1206	Military Non-Inductive	-55 °C	150 °C	0.25 W	250 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tray	25	$ 11.70

General part information

Chip Resistor

Technical documentation and resources