Beta
⌘K
RES SMD 100 OHM 1% 1/4W 1206
| Part | Number of Terminations | Resistance | Failure Rate | Package / Case | Tolerance | Composition | Size / Dimension [y] | Size / Dimension [y] | Size / Dimension [x] | Size / Dimension [x] | Temperature Coefficient | Height - Seated (Max) [Max] [z] | Height - Seated (Max) [Max] [z] | Supplier Device Package | Features | Operating Temperature [Min] | Operating Temperature [Max] | Power (Watts) | Power (Watts) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2 | 100 Ohms | P | 1206 (3216 Metric) | 1 % | Thin Film | 0.063 in | 1.6 mm | 0.126 " | 3.2 mm | 100 ppm/°C | 0.84 mm | 0.033 " | 1206 | Military Non-Inductive | -55 °C | 150 °C | 0.25 W | 250 mW |
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | |||||||||||||||||||
Vishay General Semiconductor - Diodes Division | 2 | 33.2 Ohms | R (0.01%) | 1206 (3216 Metric) | 1 % | Thin Film | 0.063 in | 1.6 mm | 0.126 " | 3.2 mm | 50 ppm/°C | 0.84 mm | 0.033 " | 1206 | Military Non-Inductive | -55 °C | 150 °C | 0.25 W | 250 mW |