AOSS21115C

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 4.5A SOT23-3

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Alpha & Omega Semiconductor Inc.

MOSFET P-CH 20V 4.5A SOT23-3

Technical Specifications

Parameters and characteristics for this part

Specification	AOSS21115C

Current - Continuous Drain (Id) @ 25°C	4.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	17 nC
Input Capacitance (Ciss) (Max) @ Vds	930 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-SMD, SOT-23-3 Variant
Power Dissipation (Max)	1.3 W
Rds On (Max) @ Id, Vgs	40 mOhm
Supplier Device Package	SOT-23-3
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	950 mV

Part	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Vgs (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Supplier Device Package	Mounting Type	Package / Case	Technology
Alpha & Omega Semiconductor Inc. AOSS21115C	20 V	40 mOhm	1.3 W	4.5 A	1.8 V 4.5 V	P-Channel	8 V	-55 °C	150 °C	930 pF	950 mV	17 nC	SOT-23-3	Surface Mount	3-SMD SOT-23-3 Variant	MOSFET (Metal Oxide)

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General part information

P-Channel 20 V 4.5A (Ta) 1.3W (Ta) Surface Mount SOT-23-3

Technical documentation and resources