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DMP3027LFDE-7 - Package Image for U-DFN2020-6

DMP3027LFDE-7

Active
Diodes Inc

30V P-CHANNEL ENHANCEMENT MODE MOSFET

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DMP3027LFDE-7 - Package Image for U-DFN2020-6

DMP3027LFDE-7

Active
Diodes Inc

30V P-CHANNEL ENHANCEMENT MODE MOSFET

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationDMP3027LFDE-7
Current - Continuous Drain (Id) @ 25°C8.5 A
Drain to Source Voltage (Vdss)30 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 4.5 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs21.8 nC
Input Capacitance (Ciss) (Max) @ Vds1142 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case6-PowerUDFN
Power Dissipation (Max)1 W
Rds On (Max) @ Id, Vgs25 mOhm
Supplier Device PackageU-DFN2020-6 (Type E)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id2.4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTape & Reel (TR) 3000$ 0.16
6000$ 0.15
9000$ 0.14
15000$ 0.13
21000$ 0.13
30000$ 0.12
75000$ 0.12

Description

General part information

DMP3027LFDE Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.