BULB7216-1

Obsolete

STMicroelectronics

TRANS NPN 700V 3A I2PAK

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Obsolete

STMicroelectronics

TRANS NPN 700V 3A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	BULB7216-1

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	100 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	4 hFE
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power - Max [Max]	80 W
Supplier Device Package	TO-262 (I2PAK)
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3 V
Voltage - Collector Emitter Breakdown (Max) [Max]	700 V

Part	Current - Collector (Ic) (Max) [Max]	Power - Max [Max]	Operating Temperature	Vce Saturation (Max) @ Ib, Ic	Mounting Type	Package / Case	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce	Current - Collector Cutoff (Max) [Max]	Transistor Type
STMicroelectronics BULB7216-1	3 A	80 W	150 °C	3 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	TO-262 (I2PAK)	700 V	4 hFE	100 µA	NPN
STMicroelectronics BULB7216T4	3 A	80 W	150 °C	3 V	Surface Mount	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	D2PAK	700 V	4 hFE	100 µA	NPN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 700 V 3 A 80 W Through Hole TO-262 (I2PAK)

Technical documentation and resources