DZ435N40KS01HPSA1

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Infineon Technologies

DIODE GEN PURP 4KV 700A PB501-1

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Infineon Technologies

DIODE GEN PURP 4KV 700A PB501-1

Technical Specifications

Parameters and characteristics for this part

Specification	DZ435N40KS01HPSA1

Current - Average Rectified (Io)	700 A
Current - Reverse Leakage @ Vr	50 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction	150 °C
Package / Case	Module
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	BG-PB501-1
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4000 V

Part	Current - Average Rectified (Io)	Mounting Type	Package / Case	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction	Technology	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies DZ435N40KS01HPSA1	700 A	Chassis Mount	Module	Standard Recovery >500ns	200 mA	BG-PB501-1	50 mA	150 °C	Standard	4000 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 4000 V 700A Chassis Mount BG-PB501-1

Technical documentation and resources