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BCR562E6327HTSA1 - SOT-23-3

BCR562E6327HTSA1

Infineon Technologies

BRT TRANS, 4.7K/4.7KOHM, SOT23

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BCR562E6327HTSA1 - SOT-23-3

BCR562E6327HTSA1

Infineon Technologies

BRT TRANS, 4.7K/4.7KOHM, SOT23

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationBCR562E6327HTSA1
Current - Collector (Ic) (Max) [Max]500 mA
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]60
Frequency - Transition150 MHz
Mounting TypeSurface Mount
Package / CaseSOT-23-3, TO-236-3, SC-59
Power - Max [Max]330 mW
Resistor - Base (R1)4.7 kOhms
Resistor - Emitter Base (R2)4700 Ohms
Supplier Device PackagePG-SOT23
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]50 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.38
10$ 0.27
100$ 0.14
500$ 0.12
1000$ 0.09
Digi-Reel® 1$ 0.38
10$ 0.27
100$ 0.14
500$ 0.12
1000$ 0.09
Tape & Reel (TR) 3000$ 0.08
6000$ 0.08
9000$ 0.07
30000$ 0.07
75000$ 0.06
150000$ 0.06
NewarkEach (Supplied on Cut Tape) 1$ 0.37
10$ 0.23
25$ 0.20
50$ 0.18
100$ 0.15
250$ 0.14
500$ 0.12
1000$ 0.10

Description

General part information

BCR562 Series

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 500 mA 150 MHz 330 mW Surface Mount PG-SOT23

Documents

Technical documentation and resources