IXFC20N80P

Obsolete

IXYS

MOSFET N-CH 800V 11A ISOPLUS220

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Obsolete

IXYS

MOSFET N-CH 800V 11A ISOPLUS220

Technical Specifications

Parameters and characteristics for this part

Specification	IXFC20N80P

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	85 nC
Input Capacitance (Ciss) (Max) @ Vds	4680 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	ISOPLUS220™
Power Dissipation (Max) [Max]	166 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	ISOPLUS220™
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	5 V

Part	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	FET Type	Technology	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id	Power Dissipation (Max) [Max]	Gate Charge (Qg) (Max) @ Vgs	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C
IXYS IXFC20N80P	30 V	4680 pF	Through Hole	N-Channel	MOSFET (Metal Oxide)	10 V	800 V	-55 °C	150 °C	5 V	166 W	85 nC	ISOPLUS220™	500 mOhm	ISOPLUS220™	11 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 800 V 11A (Tc) 166W (Tc) Through Hole ISOPLUS220™

Technical documentation and resources

No documents available