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PWD5F60TR - PWD5F60TR

PWD5F60TR

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STMicroelectronics

HIGH-DENSITY POWER DRIVER - HIGH VOLTAGE FULL BRIDGE WITH INTEGRATED COMPARATORS

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PWD5F60TR - PWD5F60TR

PWD5F60TR

Active
STMicroelectronics

HIGH-DENSITY POWER DRIVER - HIGH VOLTAGE FULL BRIDGE WITH INTEGRATED COMPARATORS

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationPWD5F60TR
ApplicationsIndustrial
Current - Output / Channel3.5 A
Current - Peak Output14 A
Fault ProtectionUVLO
InterfaceLogic
Load TypeInductive
Mounting TypeSurface Mount
Operating Temperature [Max]125 ¯C
Operating Temperature [Min]-40 °C
Output ConfigurationHalf Bridge (2)
Package / Case46-PowerVQFN
Rds On (Typ)1.38 Ohm
Supplier Device Package46-VFQFPN (15x7)
TechnologyPower MOSFET
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.98
10$ 3.79
25$ 3.50
100$ 3.17
250$ 3.01
500$ 2.92
1000$ 2.84
Digi-Reel® 1$ 4.98
10$ 3.79
25$ 3.50
100$ 3.17
250$ 3.01
500$ 2.92
1000$ 2.84
Tape & Reel (TR) 2500$ 2.55
NewarkEach (Supplied on Cut Tape) 1$ 3.71
10$ 3.46
25$ 3.26
50$ 3.06
100$ 2.85
250$ 2.74
500$ 2.73

Description

General part information

PWD5F60 Series

The PWD5F60 is an advanced power system-in package integrating gate drivers and four N-channel power MOSFETs in dual half-bridge configuration.

The integrated power MOSFETs have RDS(ON)of 1.38 Ω and 600 V drain-source breakdown voltage, while the embedded gate drivers high side can be easily supplied by the integrated bootstrap diode. The high integration of the device allows to efficiently drive loads in a tiny space.

The PWD5F60 accepts a supply voltage (VCC) extending over a wide range (10 V to 20 V) and also features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions.