DMP2004WK-7

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Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -400MA; IDM: -1.4A; 250MW

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DMP2004WK-7

Active

Diodes Inc

TRANSISTOR: P-MOSFET; UNIPOLAR; -20V; -400MA; IDM: -1.4A; 250MW

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	DMP2004WK-7

Current - Continuous Drain (Id) @ 25°C	400 mA
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	175 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-70, SOT-323
Power Dissipation (Max) [Max]	250 mW
Rds On (Max) @ Id, Vgs	900 mOhm
Supplier Device Package	SOT-323
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1 V

DMP2004WK Series

P-Channel Enhancement Mode MOSFET

Part	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	Mounting Type	Package / Case	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max) [Max]	Qualification	Grade
Diodes Inc DMP2004TK	20 V	230 mW	Surface Mount	SOT-523	8 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	0.97 nC	430 mA	1.1 Ohm	SOT-523	MOSFET (Metal Oxide)	1 V	47 pF
Diodes Inc DMP2004TK-7-79	20 V	230 mW	Surface Mount	SOT-523	8 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C	0.97 nC	430 mA	1.1 Ohm	SOT-523	MOSFET (Metal Oxide)	1 V	47 pF
Diodes Inc DMP2004WK-7	20 V		Surface Mount	SC-70 SOT-323	8 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C		400 mA	900 mOhm	SOT-323	MOSFET (Metal Oxide)	1 V	175 pF	250 mW
Diodes Inc DMP2004KQ-7	20 V		Surface Mount	SC-59 SOT-23-3 TO-236-3	8 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C		600 mA	900 mOhm	SOT-23-3	MOSFET (Metal Oxide)	1 V	175 pF	550 mW	AEC-Q101	Automotive
Diodes Inc DMP2004K-7	20 V		Surface Mount	SC-59 SOT-23-3 TO-236-3	8 V	P-Channel	1.8 V 4.5 V	-55 °C	150 °C		600 mA	900 mOhm	SOT-23-3	MOSFET (Metal Oxide)	1 V	175 pF	550 mW

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.45
		10	$ 0.39
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.17
	Digi-Reel®	1	$ 0.45
		10	$ 0.39
		100	$ 0.27
		500	$ 0.21
		1000	$ 0.17
	Tape & Reel (TR)	3000	$ 0.13
TME	N/A	1	$ 0.80
		10	$ 0.54
		100	$ 0.39
		500	$ 0.28

Description

General part information

DMP2004WK Series

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management applications.

Documents

Technical documentation and resources

Datasheet

Package PDF

Package File

Recommended Soldering Techniques

Technical Document