1N3671AR

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GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

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GeneSiC Semiconductor

DIODE GEN PURP REV 800V 12A DO4

Technical Specifications

Parameters and characteristics for this part

Specification	1N3671AR

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-4
Technology	Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If [Max]	1.1 V

Part	Speed	Speed	Mounting Type	Current - Average Rectified (Io)	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Supplier Device Package
GeneSiC Semiconductor 1N3671AR	Standard Recovery >500ns	200 mA	Chassis Stud Mount	12 A	DO-203AA DO-4 Stud	800 V	10 µA	1.1 V	200 C	-65 C	Reverse Polarity Standard	DO-4

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General part information

Diode 800 V 12A Chassis, Stud Mount DO-4

Technical documentation and resources