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FM1808B-SGTR - INFINEON FM28V020-SGTR

FM1808B-SGTR

Active
Infineon Technologies

FERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, PARALLEL, 4.5 V TO 5.5 V SUPPLY, SOIC-28

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FM1808B-SGTR - INFINEON FM28V020-SGTR

FM1808B-SGTR

Active
Infineon Technologies

FERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, PARALLEL, 4.5 V TO 5.5 V SUPPLY, SOIC-28

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationFM1808B-SGTR
Memory FormatFRAM
Memory InterfaceParallel
Memory Organization32K x 8
Memory Size32 KB
Memory TypeNon-Volatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case28-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Supplier Device Package28-SOIC
TechnologyFRAM (Ferroelectric RAM)
Voltage - Supply [Max]5.5 V
Voltage - Supply [Min]4.5 V
Write Cycle Time - Word, Page130 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 12.96
10$ 12.00
25$ 11.73
50$ 11.66
100$ 10.27
250$ 9.76
500$ 9.66
Digi-Reel® 1$ 12.96
10$ 12.00
25$ 11.73
50$ 11.66
100$ 10.27
250$ 9.76
500$ 9.66
Tape & Reel (TR) 1000$ 9.34
NewarkEach (Supplied on Cut Tape) 1$ 13.08
10$ 12.12
25$ 11.85
50$ 11.77
100$ 10.37
250$ 9.85
500$ 9.76

Description

General part information

FM1808B Series

FM1808B-SGTR is a 256Kbit (32 K × 8) byte wide F-RAM memory. This is a 32 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM1808B operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM1808B ideal for nonvolatile memory applications requiring frequent or rapid writes.

Documents

Technical documentation and resources