
FM1808B-SGTR
ActiveFERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, PARALLEL, 4.5 V TO 5.5 V SUPPLY, SOIC-28
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FM1808B-SGTR
ActiveFERROELECTRIC RAM (FRAM), 256 KBIT, 32K X 8BIT, PARALLEL, 4.5 V TO 5.5 V SUPPLY, SOIC-28
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Technical Specifications
Parameters and characteristics for this part
| Specification | FM1808B-SGTR |
|---|---|
| Memory Format | FRAM |
| Memory Interface | Parallel |
| Memory Organization | 32K x 8 |
| Memory Size | 32 KB |
| Memory Type | Non-Volatile |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 85 °C |
| Operating Temperature [Min] | -40 °C |
| Package / Case | 28-SOIC |
| Package / Case [x] | 0.295 in |
| Package / Case [y] | 7.5 mm |
| Supplier Device Package | 28-SOIC |
| Technology | FRAM (Ferroelectric RAM) |
| Voltage - Supply [Max] | 5.5 V |
| Voltage - Supply [Min] | 4.5 V |
| Write Cycle Time - Word, Page | 130 ns |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 12.96 | |
| 10 | $ 12.00 | |||
| 25 | $ 11.73 | |||
| 50 | $ 11.66 | |||
| 100 | $ 10.27 | |||
| 250 | $ 9.76 | |||
| 500 | $ 9.66 | |||
| Digi-Reel® | 1 | $ 12.96 | ||
| 10 | $ 12.00 | |||
| 25 | $ 11.73 | |||
| 50 | $ 11.66 | |||
| 100 | $ 10.27 | |||
| 250 | $ 9.76 | |||
| 500 | $ 9.66 | |||
| Tape & Reel (TR) | 1000 | $ 9.34 | ||
| Newark | Each (Supplied on Cut Tape) | 1 | $ 13.08 | |
| 10 | $ 12.12 | |||
| 25 | $ 11.85 | |||
| 50 | $ 11.77 | |||
| 100 | $ 10.37 | |||
| 250 | $ 9.85 | |||
| 500 | $ 9.76 | |||
Description
General part information
FM1808B Series
FM1808B-SGTR is a 256Kbit (32 K × 8) byte wide F-RAM memory. This is a 32 K × 8 nonvolatile memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is nonvolatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM1808B operation is similar to that of other RAM devices and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Minimum read and write cycle times are equal. The F-RAM memory is nonvolatile due to its unique ferroelectric memory process. These features make the FM1808B ideal for nonvolatile memory applications requiring frequent or rapid writes.
Documents
Technical documentation and resources