TK20E60W,S1VX

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CH 600V 20A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK20E60W,S1VX

Current - Continuous Drain (Id) @ 25°C	20 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	48 nC
Input Capacitance (Ciss) (Max) @ Vds	1680 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max) [Max]	165 W
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.7 V

Part	Power Dissipation (Max) [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature	Package / Case	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Supplier Device Package
Toshiba Semiconductor and Storage TK20E60W,S1VX	165 W	20 A	MOSFET (Metal Oxide)	48 nC	N-Channel	10 V	Through Hole	600 V	150 °C	TO-220-3	30 V	1680 pF	3.7 V	TO-220

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General part information

N-Channel 600 V 20A (Ta) 165W (Tc) Through Hole TO-220

Technical documentation and resources