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STP22NM60N - TO-220-3

STP22NM60N

Unknown
STMicroelectronics

N-CHANNEL 600 V, 0.2 OHM, 16 A MDMESH(TM) II POWER MOSFET IN TO-220

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Search across all available documentation for this part.

DocumentsAN4337AN2842+17
STP22NM60N - TO-220-3

STP22NM60N

Unknown
STMicroelectronics

N-CHANNEL 600 V, 0.2 OHM, 16 A MDMESH(TM) II POWER MOSFET IN TO-220

Deep-Dive with AI

DocumentsAN4337AN2842+17

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP22NM60N
Current - Continuous Drain (Id) @ 25°C16 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]44 nC
Input Capacitance (Ciss) (Max) @ Vds1300 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max)125 W
Rds On (Max) @ Id, Vgs220 mOhm
Supplier Device PackageTO-220
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 2.72
50$ 2.16
100$ 1.85
500$ 1.81

Description

General part information

STP22NM60N Series

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.