IS61NLP12836B-200TQLI

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ISSI, Integrated Silicon Solution Inc

SRAM CHIP SYNC QUAD 3.3V 4M-BIT 128K X 36 3.1NS 100-PIN TQFP

IS61NLP12836B-200TQLI

Active

ISSI, Integrated Silicon Solution Inc

SRAM CHIP SYNC QUAD 3.3V 4M-BIT 128K X 36 3.1NS 100-PIN TQFP

Description Specifications Series Pricing CAD Documents

Description

General part information

IS61NLP12836 Series

100 percent bus utilization

No wait cycles between Read and Write

Internal self-timed write cycle

Technical Specifications

Parameters and characteristics for this part

Specification	IS61NLP12836B-200TQLI

Access Time	3.1 ns
Clock Frequency	200 MHz
Memory Depth	128 K
Memory Format	SRAM
Memory Interface (Type)	Parallel
Memory Size	4.5 Mbit
Memory Type	Volatile
Memory Width	36 bit
Mounting Type	Surface Mount
Operating Temperature (Max)	85 °C
Operating Temperature (Min)	-40 °C
Package / Case	100-LQFP
Package Length	14 mm
Package Name	100-LQFP
Package Width	20 mm
Technology	SRAM - Synchronous, SDR
Voltage - Supply (Maximum)	3.465 V
Voltage - Supply (Minimum)	3.135 V

IS61NLP12836 Series

Part	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Memory Size	Operating Temperature (Max)	Operating Temperature (Min)	Package Width	Package Name	Package Length	Memory Interface (Type)	Memory Type	Technology	Access Time	Mounting Type	Memory Width	Memory Depth	Memory Format	Clock Frequency	Package / Case
ISSI, Integrated Silicon Solution Inc IS61NLP12836EC-200TQLI-TR	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP12836B-200TQLI	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP12836B-200TQI	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP12836EC-200B3LI-TR	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	15 mm	165-TFBGA	13 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP12836EC-200B3LI	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	15 mm	165-TFBGA	13 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	165-TBGA
ISSI, Integrated Silicon Solution Inc IS61NLP12836B-200TQLI-TR	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP12836EC-200TQLI	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP
ISSI, Integrated Silicon Solution Inc IS61NLP12836B-200TQI-TR	3.135 V	3.465 V	4.5 Mbit	85 °C	-40 °C	20 mm	100-LQFP	14 mm	Parallel	Volatile	SDR SRAM - Synchronous	3.1 ns	Surface Mount	36 bit	128 K	SRAM	200 MHz	100-LQFP

Pricing

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