CRG04(TE85L,Q,M)

Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A S-FLAT

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Obsolete

Toshiba Semiconductor and Storage

DIODE GEN PURP 600V 1A S-FLAT

Technical Specifications

Parameters and characteristics for this part

Specification	CRG04(TE85L,Q,M)

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	SOD-123F
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	S-FLAT (1.6x3.5)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	600 V
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Package / Case	Supplier Device Package	Speed	Speed	Technology
Toshiba Semiconductor and Storage CRG04(TE85L,Q,M)	Surface Mount	600 V	1 A	150 °C	-40 °C	10 µA	1.1 V	SOD-123F	S-FLAT (1.6x3.5)	Standard Recovery >500ns	200 mA	Standard

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 600 V 1A Surface Mount S-FLAT (1.6x3.5)

Technical documentation and resources

No documents available