IPB009N03LGATMA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 0.95 MOHM; WIDE SOA
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IPB009N03LGATMA1
ObsoleteInfineon Technologies
OPTIMOS™ 3 N-CHANNEL POWER MOSFET 30 V ; D2PAK 7PIN TO-263 7PIN PACKAGE; 0.95 MOHM; WIDE SOA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | IPB009N03LGATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 180 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V, 4.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 227 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 25000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | TO-263-7, D2PAK |
| Power Dissipation (Max) [Max] | 250 W |
| Rds On (Max) @ Id, Vgs | 0.95 mOhm |
| Supplier Device Package | PG-TO263-7-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
IPB009 Series
Lowest on-state resistance in small footprint packages make OptiMOS™3 30V the best choice for the demanding requirements of battery management, Or-ing, e-fuse and hot-swap application.
Documents
Technical documentation and resources