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STMICROELECTRONICS STW13NK60Z

STW45N60DM6

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STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 30 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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STMICROELECTRONICS STW13NK60Z

STW45N60DM6

Active
STMicroelectronics

N-CHANNEL 600 V, 0.085 OHM TYP., 30 A MDMESH DM6 POWER MOSFET IN A TO-247 PACKAGE

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Description

General part information

STW45N60DM6 Series

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Technical Specifications

Parameters and characteristics for this part

SpecificationSTW45N60DM6
Current - Continuous Drain (Id) (Tc)30 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)44 nC, 44 nC
Input Capacitance (Ciss) (Max)1920 pF
Mounting TypeThrough Hole
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseTO-247-3
Package NameTO-247-3
Power Dissipation (Max)210 W
Rds On (Max)99 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)25 V
Vgs(th) (Max)4.75 V

Pricing

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CAD

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