Specification	RJK1002DPN-E0#T2

Current - Continuous Drain (Id) (Ta)	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	94 nC
Input Capacitance (Ciss) (Max)	6450 pF, 6450 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Package Name	TO-220AB
Power Dissipation (Max)	150 W
Rds On (Max)	7.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

RJK1002DPN-E0 Series

Nch Single Power Mosfet 100V 70A 7.6Mohm To-220Ab

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	FET Type	Package Name	Operating Temperature	Rds On (Max)	Mounting Type	Technology	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case
Renesas Electronics Corporation RJK1002DPN-E0#T2	6450 pF 6450 pF	100 V	N-Channel	TO-220AB	150 °C	7.6 mOhm	Through Hole	MOSFET (Metal Oxide)	70 A	94 nC	20 V	150 W	10 V	TO-220-3

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