IPD06P004NSAUMA1

Obsolete

Infineon Technologies

MOSFET P-CH 60V 16.4A TO252

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Obsolete

Infineon Technologies

MOSFET P-CH 60V 16.4A TO252

Technical Specifications

Parameters and characteristics for this part

Specification	IPD06P004NSAUMA1

Current - Continuous Drain (Id) @ 25°C	16.4 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	27 nC
Input Capacitance (Ciss) (Max) @ Vds	1100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max)	63 W
Rds On (Max) @ Id, Vgs	90 mOhm
Supplier Device Package	PG-TO252-3-313
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Vgs (Max)	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Technology	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Mounting Type	Power Dissipation (Max) [Max]	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)
Infineon Technologies IPD06P005NATMA1	4 V	20 V	60 V	6.5 A	MOSFET (Metal Oxide)	250 mOhm	10 V	10.6 nC	PG-TO252-3	Surface Mount	28 W	P-Channel	420 pF	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3
Infineon Technologies IPD06P005LSAUMA1	2 V	20 V	60 V	6.5 A	MOSFET (Metal Oxide)	250 mOhm	4.5 V 10 V		PG-TO252-3-313	Surface Mount	28 W	P-Channel	420 pF	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3	13.8 nC
Infineon Technologies IPD06P004NATMA1	4 V	20 V	60 V	16.4 A	MOSFET (Metal Oxide)	90 mOhm	10 V	27 nC	PG-TO252-3	Surface Mount		P-Channel	1100 pF	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		63 W
Infineon Technologies IPD06P004NSAUMA1	4 V	20 V	60 V	16.4 A	MOSFET (Metal Oxide)	90 mOhm	10 V	27 nC	PG-TO252-3-313	Surface Mount		P-Channel	1100 pF	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		63 W
Infineon Technologies IPD06P003NATMA1	4 V	20 V	60 V	22 A	MOSFET (Metal Oxide)	65 mOhm	10 V	39 nC	PG-TO252-3	Surface Mount		P-Channel	1600 pF	-55 °C	175 ░C	DPAK (2 Leads + Tab) SC-63 TO-252-3		83 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 16.4A (Tc) 63W (Tc) Surface Mount PG-TO252-3-313

Technical documentation and resources

No documents available