IPB050N10NF2SATMA1
ActiveINFINEON'S STRONGIRFET™ 2 POWER MOSFET 100 V FEATURES LOW RDS(ON) OF 5 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.
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IPB050N10NF2SATMA1
ActiveINFINEON'S STRONGIRFET™ 2 POWER MOSFET 100 V FEATURES LOW RDS(ON) OF 5 MOHM, ADDRESSING A BROAD RANGE OF APPLICATIONS FROM LOW- TO HIGH-SWITCHING FREQUENCY.
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Technical Specifications
Parameters and characteristics for this part
| Specification | IPB050N10NF2SATMA1 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 103 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6 V, 10 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 76 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 3600 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 175 ░C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) | 150 W |
| Rds On (Max) @ Id, Vgs [Max] | 5.05 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id | 3.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
IPB050N Series
Infineon'sStrongIRFET™ 2power MOSFET 100 V features low RDS(on)of 5 mOhm, addressing a broad range of applications from low- to high-switching frequency.
Documents
Technical documentation and resources