HP4936DYT

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Harris Corporation

MOSFET 2N-CH 30V 5.8A 8SOIC

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Harris Corporation

MOSFET 2N-CH 30V 5.8A 8SOIC

Technical Specifications

Parameters and characteristics for this part

Specification	HP4936DYT

Configuration	2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C	5.8 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	25 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	37 mOhm
Supplier Device Package	8-SOIC
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Part	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Package / Case [y]	Package / Case [x]	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	FET Feature	Drain to Source Voltage (Vdss)	Configuration	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C
Harris Corporation HP4936DYT	2 W	25 nC	1 V	37 mOhm	8-SOIC	3.9 mm	0.154 in	Surface Mount	625 pF	MOSFET (Metal Oxide)	8-SOIC	Logic Level Gate	30 V	2 N-Channel (Dual)	-55 °C	150 °C	5.8 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1110	$ 0.27

General part information

Mosfet Array 30V 5.8A (Ta) 2W (Ta) Surface Mount 8-SOIC

Technical documentation and resources

No documents available